Work

Mathematical Modeling of Gas Dynamics and Impurity Transport During Silicon Single Crystal Growth by Redmet-90m

Year: 2024

Type: conference-paper

Abstract: This article presents mathematical modeling of argon gas dynamics in rarefied atmosphere of REDMET-90M hot zone for Czochralski silicon single crystal growth. The influence of heat shield locations on gas flow structure is analyzed at its inlet through upper central hole and outlet through central bottom hole. Taking into account of this gas flow, the transfer of silicon monoxide evaporating from a melt and carbon monoxide formed by heater oxidation are calculated.

Source: International Conference on Mathematical Modeling in Materials Science of Electronic Components (MMMSEC)

DOI: 10.29003/m4270.mmmsec-2024/94-97

Authors: Nataliya Verezub, Anatoliy Prostomolotov

Language: English

Topic: Gas Dynamics and Kinetic Theory

Subfield: Applied Mathematics

Field: Mathematics

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4403674359

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