Work

Integration of High-k Metal Gate (HKMG) to Core/Peri Transistors of DRAM Addressing Reliability Issues

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719458

Authors: Chan Sic Yoon, Chan-Wool Bae, Kiseok Lee, Hoin Lee, Sung Ho Jang, Yongseok Ahn, Bong-Soo Kim, Seguen Park, Jemin Park

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4403675095

FWCI: 0.806

Cites: 5

Cited by: 1

Related to: 10