Work

A 14nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719479

Authors: Jungmyung Kang, Keonhee Cho, Sekeon Kim, Giseok Kim, Hyunjun Kim, Dongwook Seo, Sangyeop Baeck, Seiseung Yoon, Seong-Ook Jung

Institutions: Yonsei University, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Samsung

OpenAlex ID: W4403675854

FWCI: 0.799

Cites: 6

Cited by: 1

Related to: 10