Work

Compact Model of Conductive-Metal-Oxide/HfOx Analog Filamentary ReRAM Devices

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719489

Authors: Matteo Galetta, Donato Francesco Falcone, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Wooseok Choi, Bert Jan Offrein, Valeria Bragaglia

Institutions: IBM Research - Zurich, Forschungszentrum Jülich

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education

OpenAlex ID: W4403675856

FWCI: 6.239

Cites: 15

Cited by: 8

Related to: 10