Work

Elucidating Experimental Device-to-Device Variability in OxRAM Based on TCAD Modeling

Year: 2024

Type: conference-paper

Abstract: The SET and RESET are the fundamental operations in oxide resistive memory devices (OxRAM). Combining experiments and advanced TCAD simulation, we examined the device-to-device variability and switching kinetics of these operations in HfO2-based OxRAM. Heat generation by electric current plays a key role, resulting in an inverse relation between current and voltage at the SET point. Therefore, the thermal conductance, especially at contact, and the size of the filament contribute to the device-to-device variabilities.

DOI: 10.1109/esserc62670.2024.10719407

Authors: Y. Hirchaou, T. Bauvent, W. Goes, E.C. Hylin, P. Blaise, J. Li, G. Pillonnet, S. Martinie, F. Triozon

Institutions: Silvaco (United Kingdom), Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Association Nationale de la Recherche et de la Technologie

OpenAlex ID: W4403676004

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