Work

High Density 360 /μm Aligned CNT FET with ION >1 mA/μm at -0.5 V VD and 30nm Lch

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719532

Authors: Xiangyu Wu, Marina Y. Timmermans, Lijun Liu, Fengben Xi, Himanshu Sharma, Zaoyang Lin, Daire Cott, Luca Mana, Thomas Nuytten, Jean-Francois de Marneffe, Han Han, Steven Brems, Ludovic Goux, Cesar Javier Lockhart de La Rosa, Dennis Lin, Gouri Sankar Kar

Institution: IMEC

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Graphene Flagship

OpenAlex ID: W4403676917

FWCI:

Cites: 8

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Related to: 10