Work

Temperature and Strain Effects on Polarization of Light Emitted by AlGaN Bulk Layers and Quantum Wells

Year: 2024

Type: conference-paper

Source: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

DOI: 10.1109/nusod62083.2024.10723702

Authors: D. A. Ivanov, S. Yu. Karpov

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403677261

FWCI:

Cites: 3

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Related to: 10