Work

Impact of Bottom DBR Radius and Electric Aperture Radius on GaN VCSEL Operation

Year: 2024

Type: conference-paper

Source: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

DOI: 10.1109/nusod62083.2024.10723577

Authors: Robert P. Sarzała, Dominika Dąbrówka, Maciej Dems

Institution: Lodz University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403677288

FWCI:

Cites: 8

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Related to: 10