Work

Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719578

Authors: C. Piotrowicz, N. Malbert, S. Torrengo, A. Olivier, B. Mohamad

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Centre National de la Recherche Scientifique, Université de Bordeaux, Laboratoire de l'Intégration du Matériau au Système

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403677293

FWCI: 1.159

Cites: 6

Cited by: 1

Related to: 10