Work

Characterizations and Framework Modeling of Bulk MOSFET Threshold Voltage Based on a Physical Charge-Based Model Down to 4 K

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719583

Authors: Hao Su, Yunfeng Xie, Yuhuan Lin, Haihan Wu, Wenxin Li, Zhizhao Ma, Yiyuan Cai, Xu Si, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen

Institutions: Southern University of Science and Technology, Shenzhen International Quantum Academy

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403678024

FWCI: 1.562

Cites: 16

Cited by: 2

Related to: 10