Work

P-type Extended Drain MOSFET integration on thin SOI

Year: 2024

Type: conference-paper

DOI: 10.1109/esserc62670.2024.10719520

Authors: A. Boutayeb, D. Golanski, F. Guyader, S. Joblot, F. Baron, P. Chantraine, Y. Escarabajal, O. Gourhant, A. Inard, C. Jenny, J. Duval, S. Delmedico, A. Boutayeb, C. Theodorou, A. Boutayeb, F. Ponthenier, J. Lacord

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, STMicroelectronics (France), Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Savoie Mont Blanc

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403678182

FWCI:

Cites: 9

Cited by:

Related to: 10