Work

Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates

Year: 2024

Type: conference-paper

Source: Proceedings - International Symposium for Testing and Failure Analysis

DOI: 10.31399/asm.cp.istfa2024p0146

Authors: M. Stabentheiner, D. Tilly, T. Schinnerl, A.A. Taylor, P. Javernik, M. Novak, C. Ostermaier, D. Pogany

Institutions: Infineon Technologies (Austria), TU Wien

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403685889

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