Work

Degradation mechanism during catastrophic optical damage in 385 nm GaN-based ultraviolet laser diodes

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0216168

Authors: Yujie Huang, Jing Yang, Degang Zhao, Zongshun Liu, Ping Chen, Feng Liang, Yufei Hou

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Beijing Municipal Science and Technology Commission, Beijing Nova Program

Awards: G1397254847, G2448729015, G3036932515, G3804544856, G4487040938, G6778801559, G7337884771, G7575456791, G8002630593, G818527181, G856220962

OpenAlex ID: W4403687114

FWCI: 1.304

Cites: 30

Cited by: 9

Related to: 10