Work

Studies of Atomic-Layer-Deposited Zn1–XSnXOY as an Alternative Buffer Layer for Cu2Zn(Sn1–X,GeX)S4 Thin-Film Solar Cells

Year: 2024

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Thin-film solar cells based on Cu 2 Zn(Sn 1− X,Ge X )S 4 (CZTGS) absorbers are emerging technologies for solar energy conversion with low-cost, nontoxic components. In this work, we investigated CZTGS-based solar cells with varying Ge contents and an alternative buffer layer of Zn 1– X Sn X O Y (ZTO) by atomic layer deposition. The results are compared to those of devices with the traditional CdS buffer layer. Overall, higher efficiency and open-circuit voltage ( V OC ) are observed for the devices with ZTO compared to those with the CdS buffer layer. Moreover, the results show that the CZTGS/ZTO device performance may further be improved by varying the ZTO properties (band gap or thickness) or by applying a surface treatment on the CZTGS absorber. An air annealing treatment of the chemically etched absorber surface improved the CZTGS device performance; however, nonetched devices show poor efficiency due to the presence of secondary phases (GeO 2 ) at the absorber/buffer interface, shown by hard X-ray photoelectron spectroscopy measurements, as previously reported for the full-germanium Cu 2 ZnGeS 4 -based devices.

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01317

Authors: Melike Babucci, Tobias Törndahl, Soham Mukherjee, Charlotte Platzer Björkman, Natalia M. Martin

Institution: Uppsala University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $4,500