Work

Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3485609

Authors: Heetae Kim, Seohak Park, Johak Jeong, Jihoon Jeon, Hoseok Lee, Chihun Sung, Jeho Na, Min Ju Kim, Seong Keun Kim, Sung-Yool Choi, Keun Heo, Sung Haeng Cho, Byung Jin Cho

Institutions: Korea Advanced Institute of Science and Technology, Jeonbuk National University, Korea University, Electronics and Telecommunications Research Institute, Dankook University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Research Council of Science and Technology

Award: G8794549428

OpenAlex ID: W4403722393

FWCI: 0.729

Cites: 21

Cited by: 7

Related to: 10