Gate Length Dependence of Bias Temperature Instabilities up to 400 °C in 4H-SiC CMOS Devices
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Institutions: Chinese Academy of Sciences, Institute of Microelectronics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403722395