Work

A Compact Writing Scheme for the Reliability Challenges in 1T Multi-Level FeFET Array: Variation, Endurance, and Write Disturb

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3485803

Authors: Yuejia Zhou, Hanyong Shao, Weiqin Huang, Runteng Zhu, Yihan Zhang, Ru Huang, Kechao Tang

Institutions: Peking University, Hong Kong University of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Higher Education Discipline Innovation Project

Awards: G2390305753, G2504776311, G5962490683, G7480401652

OpenAlex ID: W4403722400

FWCI: 0.72

Cites: 16

Cited by: 7

Related to: 10