Work

Research of A 4H-SiC MOSFET with Thick Oxide Layer and Split Gate Structure

Year: 2024

Type: conference-paper

Source: International Conference on HVDC (HVDC)

DOI: 10.1109/hvdc62448.2024.10722988

Authors: Haiyang Wu, Baoyu Zhai, Yunshan Wang, Huan Jiang, Xinyang Li, Jinxin Wang

Institution: State Grid Corporation of China (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4403723271

FWCI: 0.806

Cites: 5

Cited by: 1

Related to: 10