Work

Research on the Oscillation Mechanism of Insulated-Gate Bipolar Transistor in Short-Circuit Test

Year: 2024

Type: conference-paper

Source: International Conference on HVDC (HVDC)

DOI: 10.1109/hvdc62448.2024.10722942

Authors: Li Weibang, Dong Zhiyi, Zhou Liang, He Xin

Institution: State Grid Corporation of China (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4403723474

FWCI:

Cites: 6

Cited by:

Related to: 10