Work

Comprehensive Analysis of SEU and Vth shifts of 18nm FinFET and 45nm MOSFET devices against Radiation Effects

Year: 2024

Type: conference-paper

Source: International Conference on Smart Electronics and Communication (ICOSEC)

DOI: 10.1109/icosec61587.2024.10722216

Authors: N Prashanth Srinivas, T Ravi

Institution: Sathyabama Institute of Science and Technology

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403723678

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Cites: 15

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Related to: 10