Work

Enhanced Performance of Vertical β-Ga₂O₃ Schottky Barrier Diodes Through 212-MeV Low-Fluence Ge Ion Irradiation

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3481201

Authors: Junzheng Gao, Yun Li, Weihao Lin, Zhimei Yang, Min Gong, Mingmin Huang, Yao Ma

Institution: Sichuan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5278983756

OpenAlex ID: W4403723718

FWCI: 1.09

Cites: 40

Cited by: 14

Related to: 10