Year: 2024
Type: preprint
Abstract: Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectronic device and information processing modalities - remains an outstanding challenge. Here we combine long-lived interlayer excitons in angle-aligned MoSe$_2$/WSe$_2$ heterostructures with fast electrical control to realize dynamical control schemes, in which exciton properties are not predetermined at the time of excitation but can be dynamically manipulated during their lifetime. Leveraging the out-of-plane exciton dipole moment, we use electric fields to demonstrate dynamical control over the exciton emission wavelength. Moreover, employing a patterned gate geometry, we demonstrate rapid local sample doping and toggling of the radiative decay rate through exciton-charge interactions during the exciton lifetime. Spatially mapping the exciton response reveals charge redistribution, offering a novel probe of electronic transport in twisted TMD heterostructures. Our results establish the feasibility of dynamical exciton control schemes, unlocking new directions for exciton-based information processing and optoelectronic devices, and the realization of excitonic phenomena in TMDs.
Source: arXiv (Cornell University)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: National Science Foundation, Amazon Web Services, European Commission, Ministry of Education, Culture, Sports, Science and Technology, Samsung, Center for Ultracold Atoms, Massachusetts Institute of Technology, Core Research for Evolutional Science and Technology, Air Force Office of Scientific Research
Awards: G149988304, G2554244226, G3392305090, G3510308925, G3591598716, G369169853, Quantum Information Processing with Atomically Thin Semiconductors, G434337789, G4516736450, G485488592, G5613623313, Physics and Applications of Quantum Nanophotonics Systems, NNCI: The Center for Nanoscale System (CNS) at Harvard University, G6556517879, Center for Ultracold Atoms, G7879866177
OpenAlex ID: W4403753896