Enhancement of removing OH bonds from low-temperature-deposited silicon oxide films by adding water vapor into NH3 gas annealing at 130 °C
Year: 2024
Type: article
Abstract: In this study, it is revealed that annealing with water-vapor-added NH3 gas (water-added NH3) is more effective than with dry NH3 at removing residual OH bonds in silicon oxide (SiOx) films deposited by atmospheric chemical vapor deposition with an organic silicon source. Fourier transform infrared spectra showed that the reduction amount of OH bonds using the water-added NH3 was ∼4 or ∼1.3 times larger than using the conventional dry N2 or dry NH3 mixed with N2 gas without water, respectively. This result is somewhat surprising because water is a potential candidate as a source of OH. The effect of water vapor on OH bond removal can be explained by considering the following three factors; the first is that low-temperature SiOx films are constrained somewhat, the second is that strained Si-O-Si bonds are in a higher or more unstable energy state than strain-free ones, and the third is that highly strained bonds are easily hydroxylated to form Si-OH bonds.
Author: Susumu Horita
Institution: Japan Advanced Institute of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4403755680