Year: 2024
Type: conference-paper
Abstract: IGBTs play crucial roles in various power electronic applications, demanding reliability over extended periods. Understanding their failure mechanisms is vital for manufacturers and engineers. This study addresses gaps by correlating IGBT degradation, particularly die-attach and gate oxide contamination, with conducted electromagnetic (EM) disturbances. Accelerated ageing was conducted on 600V, 16A IGBTs using a power cycling system, revealing significant changes in static and dynamic parameters. Switching transients showed a slowdown in turn-off, attributed to the experienced degradation. Experimental setups demonstrated a direct link between degradation, switching transients, especially collector current (IC) turn-off, and reduced conducted EM disturbances.
Authors: E. Dimech, J.F. Dawson
Institution: University of Malta
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4403760157