Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0231294
Authors: Yulian Yin, Xiaoyu Liu, Xi Tang, Xuan Xie, Huan Wang, Changhui Zhao, Shu Yang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1500425931, G4204845692
OpenAlex ID: W4403764784