Year: 2024
Type: article
Abstract: Zinc oxide is a promising material in semiconductor research owing to its exceptional properties including wide band gap and high carrier mobility. We observe the effect of copper (a promising acceptor species) doping properties of zinc oxide using Density Functional Theory (DFT). Carrier concentration calculations reveal that the copper doping leads to a p-type semiconductor with an increase in hole concentration to the order of 1018 cm−3. The resultant structure is used to build junctionless nanowire transistors. These nanoscale devices exhibit excellent characteristics including a diameter-normalized on-current of more than 500 μA/μm and an on-current to off-current ratio of greater than 5 × 106 for select configurations. In addition, several design parameters are varied, and guidelines are presented that offer improved performance. Graphical abstract Fig. a Copper-doped zinc oxide junctionless transistor (UL represents source/drain underlap) b Cross-sectional view c Drain current vs gate voltage for one of the devices
Source: MRS Advances
Authors: Sazzad Hussain, L. Richard Carley
Institution: Carnegie Mellon University
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,190
Funder: Carnegie Mellon University
OpenAlex ID: W4403784244