Work

Exploring current conduction dynamics in multiferroic BiFeO3 thin films prepared via modified chemical solution method

Year: 2024

Type: article

Abstract: The current study describes current conduction mechanisms in BiFeO3 thin films prepared by using a modified chemical solution-based technique. In particular, in these films, X-ray photoelectron spectroscopy revealed that the defect causing Fe2+ ions reduced by about 18% compared to the solution-based synthesis methods reported before, indicating better film quality. The leakage current density was measured to be 1.7 × 10–6 A/cm2 at an applied voltage of 1.5 V, which is one order of magnitude less than the previously reported work in a similar system. Oxygen annealing was found to be effective in further reducing the current conduction, making these films a suitable choice for device applications. The current–voltage curves exhibited three different behaviours of current conduction mechanisms in these films. In particular, when the applied electric field was increased, a transition from Ohmic conduction to trap-filled space charge limited conduction was observed. The presented investigations demonstrate the importance of deposition methods in determining the suitability of thin films for device applications.

Source: Scientific Reports

DOI: 10.1038/s41598-024-76458-y

Authors: Waseem Ahmad Wani, Harihara Venkataraman, Kannan Ramaswamy

Institution: Birla Institute of Technology and Science - Hyderabad Campus

Language: English

Topic: Multiferroics and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,590

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Science and Engineering Research Board