Work

Development of the Ge-MDST instrument structure with an induced p-type channel

Year: 2024

Type: article

Abstract: The conditions for the growth of n-type Ge conduction layers by the HW CVD method with the parameters required to create a Ge-TIR transistor with an induced p-type channel are determined. The conditions of deposition by electron beam deposition and subsequent annealing of layers of a high-k dielectric ZrO2:Y2O3 are optimized, allowing to achieve a leakage current of 5 × 10–6 A/cm2. For the developed instrument structure, some parameters of the Ge-TIR transistor were calculated, such as the channel length, the maximum voltage between the drain and the source, and the breakdown voltage.

Source: Микроэлектроника

DOI: 10.31857/s0544126924030077

Authors: N. A. Alyabina, E. A. Arkhipova, Yu. N. Buzynin, S. A. Denisov, A. V. Zdoroveishchev, A. M. Titova, V. Yu. Chalkov, V. G. Shengurov

Institutions: N. I. Lobachevsky State University of Nizhny Novgorod, Russian Academy of Sciences, Institute for Physics of Microstructures

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4403797834

FWCI:

Cites: 13

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Related to: 10