Year: 2024
Type: article
Abstract: Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.
Source: Микроэлектроника
Institution: National Research Nuclear University MEPhI
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4403797839