Work

Subthreshold Drain Current Model of Cylindrical Gate All‐Around Junctionless Transistor With Three Different Gate Materials

Year: 2024

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/jnm.3312

Authors: S. Manikandan, P. Suveetha Dhanaselvam, M. Karthigai Pandian

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403807536

FWCI: 0.206

Cites: 22

Cited by: 2

Related to: 10