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High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

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Year: 2024
Type: article
Source: Nanotechnology
DOI: 10.1088/1361-6528/ad8bcc
Authors: Yin-Chi Liu, Gen-Ran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Anatolyevich Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lu, Shi-Jin Ding, Wenjun Liu
Institutions: Fudan University, Belarusian State University of Informatics and Radioelectronics, Ningbo University
Language: English

Topic: Ferroelectric and Negative Capacitance Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China
Awards: G1145101426, G6706031542
OpenAlex ID: W4403820668
FWCI: 0.416
Cites: 18
Cited by: 4
Related to: 10
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