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Magnetic order in nanogranular iron germanium (Fe0.53Ge0.47) films

Year: 2024
Type: article
Abstract: We study the effect of strain on the magnetic properties and magnetization configurations in nanogranular Fe x Ge 1 − x films ( x = 0.53 ± 0.05 ) with and without B20 FeGe nanocrystals surrounded by an amorphous structure. Relaxed films on amorphous silicon nitride membranes reveal a disordered skyrmion phase while films near and on top of a rigid substrate favor ferromagnetism and an anisotropic hybridization of Fe d levels and spin-polarized Ge sp band states. The weakly coupled topological states emerge at room temperature and become more abundant at cryogenic temperatures without showing indications of pinning at defects or confinement to individual grains. These results demonstrate the possibility to control magnetic exchange and topological magnetism by strain and inform magnetoelasticity-mediated voltage control of topological phases in amorphous quantum materials.
DOI: 10.1088/1361-648x/ad8c0a
Authors: Ruthi Zielinski, Nhat Nguyen, Bryce Herrington, Amir Tarkian, Omar Taha, Wai Kiat Chin, Ather Mahmood, Xiaoqian Chen, Christoph Klewe, Padraic Shafer, Jim Ciston, Paul Ashby, Claudio Mazzoli, Robert Streubel
Institutions: University of Nebraska–Lincoln, Brookhaven National Laboratory, National Synchrotron Light Source II, Lawrence Berkeley National Laboratory, Advanced Light Source, Molecular Foundry
Language: English
Open Access status: hybrid
Estimated APC paid: $3,165
Funders: National Science Foundation, U.S. Department of Energy, Office of Science, Division of Materials Research, Basic Energy Sciences, Office of Experimental Program to Stimulate Competitive Research
Awards: G1263877917, G1286236842, G1286251239, G2011318139, G2100091730, G30714459, G419881185, G42916606, G498139845, NNCI: Nebraska Nanoscale Facility (NNF), Magnetic order in disordered dipolar nanostructures, G650090426, RII Track-1: Emergent Quantum Materials and Technologies (EQUATE), G969889393
OpenAlex ID: W4403822641
FWCI: 0.16
Cites: 111
Cited by: 1
Related to: 10