Work

Switching Loss Model for Fast-Switching GaN HEMT in Half-Bridge Circuit Considering Parasitic Inductance and Temperature Effect

Year: 2024

Type: article

Source: IEEE Transactions on Circuits and Systems I Regular Papers

DOI: 10.1109/tcsi.2024.3480951

Authors: Yushan Liu, Jianyu Cao, Xiao Li

Institution: Beihang University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Nova Program, Chunhui Project Foundation of the Education Department of China

Awards: G1504040270, G3967912995, G4181499572, G640732171, G8839161290

OpenAlex ID: W4403826510

FWCI: 0.872

Cites: 29

Cited by: 6

Related to: 10