Work

Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3479155

Authors: Guoxiang Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Rikang Zhao, Yuyan Huang, Zhenglin Zhang, Ao Zhang, Jianjun Gao, Ke Wei, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Shandong University of Science and Technology, Nantong University, East China Normal University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Chinese Academy of Sciences, Youth Innovation Promotion Association of the Chinese Academy of Sciences

OpenAlex ID: W4403827215

FWCI: 0.722

Cites: 15

Cited by: 5

Related to: 10