Year: 2024
Type: conference-paper
Abstract: The results of the study of memristors presented in the form of a multilayer AlTiOx-CuOx-Al structure with the property of bipolar resistive switching are shown. The samples were obtained by magnetron sputtering in an air atmosphere at a pressure of 5×10-3 mmHg. Electron microscopic analysis showed that the copper oxide layer has a columnar structure and a non-stoichiometric ratio of elements, due to which the memristive effect is enhanced.
Authors: A.E. Urazbekov, P.E. Troyan, Y.V. Sakharov
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
OpenAlex ID: W4403890290