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ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS

Year: 2024

Type: conference-paper

Abstract: A technique for modeling the input electrical characteristics of a silicon gate-allaround field-effect transistor with HfO2 and HZO ferroelectrics was presented. A dielectric hysteresis loop was calculated for this device.

DOI: 10.61527/appfe-2024.240-242

Authors: I.Yu. Lovshenko, V.S. Volcheck, P.E. Novikov, K.O. Volchhik

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

OpenAlex ID: W4403890302

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