Investigation of Semiconductor Heterostructures With Nanoscale Layers Using Dynamic Secondary Ion Mass Spectrometry
Year: 2024
Type: conference-paper
Abstract: The results of characterization of the quantum cascade heterostructure laser based on AlInAs/GaInAs system emitting at a wavelength of 5 microns are presented. The use of dynamic secondary ion mass spectrometry for analyzing modern semiconductor heterostructures has been shown to be effective in determining the concentrations of both basic and impurity elements in nanoscale layers.
Authors: M.V. Tokarev, B.Ya. Ber, D.Yu. Kazantsev, V.V. Mamutin
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
OpenAlex ID: W4403890422