Addition to Compact Models of Gallium Arsenide Device Structures Taking Into Account the Change (degradation) of Operational Characteristics Under Radiation Exposure
Year: 2024
Type: conference-paper
Abstract: This paper presents the results of an evaluation of the degradation processes of electrical characteristics of GaAs-based field-effect transistor device structures under the influence of a proton flux using computer simulation. The principles of forming an addition to compact (electrical) models of semiconductor devices are shown, allowing for the prediction of changes in their operational characteristics under radiation exposure.
Authors: I.Yu. Lovshenko, K.V. Korsak, P.E. Novikov
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
OpenAlex ID: W4403890447