Work

TEMPERATURE DETERMINATION OF THE AlInGaN LASER ACTIVE REGION BY IR MICROSCOPY & TRANSIENT THERMAL TESTS

Year: 2024

Type: conference-paper

Abstract: In this study, the individual components of thermal resistance in a AlInGaN laser were experimentally analyzed. The thermal resistance was measured using two approaches: an indirect method, based on the measurement of transient temperature-sensitive characteristics (the voltage at the p-n junction) with the T3Ster device, and a direct method using an infrared thermal imaging microscope.

DOI: 10.61527/appfe-2024.28-29

Authors: A.E. Ivanov, A.E. Chernyakov

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

OpenAlex ID: W4403890759

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