Work

650 V vertical Al0.51Ga0.49N power Schottky diodes

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0233479

Authors: Hang Chen, Shuhui Zhang, Tianpeng Yang, Tingting Mi, Xiaowen Wang, Chao Liu

Institution: Shandong University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1048439995, G2699931331, G4753993084, G8394673485, G8590225944

OpenAlex ID: W4403893598

FWCI: 0.579

Cites: 35

Cited by: 4

Related to: 10