Work

Analytical Model of the Electron Density Peak Position of Nanosheet MOSFETs

Year: 2024

Type: article

Source: IEEJ Transactions on Electronics Information and Systems

DOI: 10.1541/ieejeiss.144.1038

Authors: Ryuhei Ito, Akira Hiroki

Institution: Kyoto Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403933234

FWCI:

Cites: 11

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Related to: 10