Work

Analysis of Sheet Thickness and Gate Voltage Dependence of Electrical Characteristics for Nanosheet MOSFETs

Year: 2024

Type: article

Source: IEEJ Transactions on Electronics Information and Systems

DOI: 10.1541/ieejeiss.144.1032

Authors: Kosei Hosoda, Akira Hiroki

Institution: Kyoto Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403933250

FWCI:

Cites: 13

Cited by:

Related to: 10