Investigation of Thermal Resistance Extraction of GaN HEMTs through DCT Measurements Techniques and TCAD-Based Physical Simulations
Year: 2024
Type: conference-paper
Abstract: In this paper, we extract the thermal resistance (RTH) of an AlGaN/GaN HEMT using a simple approach based on Drain Current Transient (DCT) spectroscopy technique. Previous work confirms that acceptor-like traps present in the Fe-doped GaN buffer are responsible for the drain-lag effect observed in the measurement. The main goal of this work is the use of trap emission time constant which is very sensitive to temperature. The extracted RTHusing the new approach was around 13 °C.mm/W. TCAD confirms that the RTHdetermined using the new measurement approach represents the RTHlocated around 150 nm under the gate.
Authors: M. Bouslama, J.C. Jacquet, F. Gaillard, S. Piotrowicz, R. Sommet, J.C. Nallatamby, G. Gauthier
Institutions: III V Lab, XLIM
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4403937710