Work

Pseudo-vertical GaN-on-Sapphire PiN Diode: Process Optimizations and Electrical Properties

Year: 2024

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic61603.2024.10732623

Authors: Zihao Lyu, Jérôme Billoué, Kevin Nadaud, Julien Ladroue, Quentin Paoli, Arnaud Yvon, Eric Frayssinet, Yvon Cordier, Daniel Alquier

Institutions: Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées Centre Val de Loire, GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies, STMicroelectronics (France), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403937947

FWCI: 1.159

Cites: 8

Cited by: 1

Related to: 10