Optimum Biasing of SiGe-HBTs to Maximize the Gain Per Current for Power Efficient Amplification
Year: 2024
Type: conference-paper
Institutions: Ruhr University Bochum, Infineon Technologies (Germany)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Ministry of Education
OpenAlex ID: W4403937973
