Work

Ultra-scaled GaN HEMTs on Sapphire with fT/fmax = 229/528 GHz and NFmin ~ 1 dB

Year: 2024

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic61603.2024.10732559

Authors: Jiaheng He, Zhe Cheng, Shujie Xie, Xuankun Wu, Changxin Mi, Lian Zhang, Zhe Liu, Yun Zhang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403938104

FWCI: 8.453

Cites: 19

Cited by: 7

Related to: 10