Work

Short Term Drift in the Recovery Time of GaN HEMT Switches

Year: 2024

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic61603.2024.10732079

Authors: Andreas Divinyi, Niklas Rorsman, Niklas Billström, Mattias Thorsell

Institutions: Saab (Sweden), Chalmers University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403938112

FWCI: 2.415

Cites: 9

Cited by: 2

Related to: 10