On the use of TCAD for the thermal analysis of RF power transistors and its application to a GaN-on-SiC HEMT with a diamond composite flange
Year: 2024
Type: conference-paper
Authors: Gabriele Formicone, John Walker, James Pomeroy, Martin Kuball
Institutions: Integra (United States), University of Bristol
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403938115