Year: 2024
Type: conference-paper
Abstract: Two well-known ultra wide-band topologies, the travelling-wave amplifier and the stacked cell, are gainfully employed to demonstrate a decade bandwidth behaviour (5-55 GHz) in conjunction with watt-level saturated output power. The selected technology is OMMIC’s Gallium Nitride on Silicon, featuring the possibility to simultaneously insert 60-nm and 100-nm gate length FETs in the same MMIC.
Institutions: University of Rome Tor Vergata, Politecnico di Torino
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Horizon 2020 Framework Programme
Award: G7160509284
OpenAlex ID: W4403938124