Sub-6 GHz RF SPDT Switches Designed in an Advanced 28 nm Fully-Depleted Silicon-on-Insulator Technology with a High Resistivity Substrate
Year: 2024
Type: conference-paper
Institutions: UCLouvain, STMicroelectronics (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403938170
